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Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
30
18
1
V
mV/°C
μ A
I GSS
Gate to Source Leakage Current, Forward V GS = 20 V, V DS = 0 V
100
nA
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.2
1.9
-6
3.0
V
mV/°C
V GS = 10 V, I D = 6.5 A
19
23
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 6.0 A
30
36
m Ω
V GS = 10 V, I D = 6.5 A, T J = 125 °C
25
30
g FS
Forward Transconductance
V DD = 5 V, I D = 6.5 A
24
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
348
135
16
1.2
465
180
25
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
5
10
ns
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 6.5 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V
I D = 6.5 A
1
11
1
5.3
2.5
1.0
0.8
10
19
10
7.4
3.5
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 6.5 A
I F = 6.5 A, di/dt = 100 A/ μ s
(Note 2)
0.86
14
3
1.2
22
10
V
ns
nC
NOTES:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a. 78 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
?2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
2
www.fairchildsemi.com
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